HDPE/CB-GP复合材料体系电性质的研究

当HDPE含量46％（质量分数，以下同）、其它添加剂（如抗氧剂、阻燃剂、交联剂和润滑剂等辅助填料）的含量11％，两种导电填料石墨（GP）和碳黑（CB）的总含量为43％时，研究结果表明石墨含量的变化对HDPE/CB-GP复合材料室温电阻率、阴C强度和后NTC强度有显著的影响．HDPE/CB-GP复合材料中GP的含量〈8．6％时，样品的室温电阻率〈30Ω·m，PTC强度〉7、后NTC强度〈1．3；电阻率．温度曲线经过17次冷热循环后重现性好，复合材料具有实际应用价值；GP在复合材料中为层片状结构。     

东濮凹陷低阻油层成因研究

针对东濮凹陷低阻油层的测井曲线显示特征，从岩石物理特性、油藏高度、泥质砂岩阳离子交换、换井滤液侵入和导电矿物影响等几个方面系统地进行了低阻油层成因研究。研究结果表明，东濮凹陷伏阻油层的形成是多种因素共同作用的结果，但骨架颗粒岩性细、泥质含量偏重、地层水矿化度高，油藏高度低是形成东濮凹陷低阻油层的主要因素。     

对异常高压层厚度划分问题的探讨

通过对喇嘛甸油田800多口聚合物井、更新井的厚度划分及对15口井的异常高压层处理的实例，根据异常高压层在电测曲线上的反映特征，准确地将异常高压层识别出来，并采用本井上下相似层对比法、周围邻井砂体预测分析法、新老标准相结合法等综合分析判断方法，正确地划分异常高压层的厚度，将漏划或少划的厚度补划上。给后续的油层对比、水淹层解释、射孔方案的编制及动态、开发综合方案的调整提供准确的基础数据，并为套管损坏的防治、新钻井的异常高压层厚度解释提供了可借鉴的依据。     

制备方法对复合触头材料导电特性的影响

根据复合材料制备方法的各自特点 ,建立了计算复合触头材料电导率的三维单元网络模型。应用该模型研究了制备方法对材料电导率的影响 ,并与测量值进行了比较。结果表明了这种模型的可行性。     

Electrical Resistance Measurement of Glass Transition and Crystallization Characteristics of Zr—Al—Cu—Ni Metallic Glasses

In this paper,glass transition and thermal stability of the Zr-Al-Cu-Ni metallic glasses were investigated by using electrical resistance measurement(ERM),DSC and X-ray diffraction techniques.The experimental results show that the ERM is capable of detecting the glass transition of the amorphous alloys and can help to distinguish the crystallization products of the Zr-Al-Cu-Ni metallic glasses owing to the difference of the electrical resistivity between the precipitation phases.     

复电阻率测井方法及其应用

复电阻率测井是以两频或多频测量地层电阻率的新方法 ,它可用来有效地识别油气层和确定水淹油层的水淹程度。简要介绍了复电阻率测井的测量原理、仪器设计。胜利油田 9口井的现场测井资料初步验证了该方法的可行性和有效性     

高频等参数感应(ВИКИЗ)测井技术应用

介绍了高频等参数感应的基本原理。以胜利油田比较典型的 3口井为例 ,详细分析了高频感应资料在划分薄夹层、确定储层流体饱和类型、评价储层电阻率空间分布等方面的应用。研究结果表明 ,高频感应具有极高的纵向分辨率和较好的径向探测特性 ,能够准确计算地层真电阻率、侵入带电阻率及侵入半径 ,通过与常规感应及薄层测井资料的对比 ,论证了高频等参数感应在测井技术应用上的优越性     

Resilient metal spring network silicone-matrix composite for separable interconnections

Resilient metal spring silicone-matrix conducting composites for separable interconnections in electronics were fabricated by the impregnation of silicone into a preform comprising randomly oriented C-shaped Cu-Be springs and a small proportion of Sn-Pb solder, which served to connect the springs at some of their intersections. Composites containing 6.1-9.8 vol.% total filler exhibited volume electrical resistivity 0.5-1.0 mΩ.cm and contact resistivity (with copper) 11-17 mΩ.cm². A compressive stress of about 30 kPa was needed for the low contact resistivity to be reached. The volume 17-26% and the contact resistivity increased by 5% after heating in air at 130-150°C for seven days. Composites containing <9 vol.% total filler showed no stress relaxation for seven days at 6.0% strain.     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

Effect of Additives on Magnetic Properties of High Frequency MnZn Power Ferrite

In keeping with the advance of more compact and more power-saving electronic equipment, the demand is increasing for smaller and more efficient switching power supply. Therefore, it is necessary to provide the adequate magnetic power ferrite materials to satisfy the demand. Such ferrite materials have to meet the following main requirement: 1) high initial permeability (μ i ); 2) high saturation magnetic induction (Bs); 3) high Curie temperature (Tc); 4) high electrical resistivity (ρ ); 5)…